High-tech development of semiconductor products 2SA2018 TR

2SA2018 TR is a semiconductor with Small Signal Bipolar Transistors (up to 0.6W), and other details of the Surface-mount bipolar transistor for driver

Rated parameters Standard value Conditions

Collector-Base voltage VCBO (V) 80

Collector-Emitter voltage VCEO (V) 80

Emitter-Base voltage VEBO (V) 6

Collector current (continuous) IC (A) 1.5

Collector current (pulse) ICP (A) 3 Pw = 10ms, Single pulse

Power dissipation PD (W) 0.5

Each terminal mounted on a recommended land pattern Junction temperature Tj (oC) 150
Storage temterature Tstg (oC) -55 to 150

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